In　this　work,　KrF　excimer　laser　irradiation　of　n-type　SiC　is　used　to　form　Ohmic　contacts　at　the　interfaces　between　the　irradiated　SiC　and　various　types　of　metals　with　different　work　functions　without　subsequent　thermal　annealing.　Ohmic　contacts　are　formed　between　laser-treated　6H-SiC　and　Ti　at　a　laser　fluence　of　0.7　J/cm(2).　Moreover,　in　the　fluence　range　of　0.7-1.3　J/cm(2),　Ohmic　characteristics　are　also　observed　between　irradiated　6HSiC　and　Au,　which　is　a　representative　inert　metal.　The　laser-induced　heavy　doping　effect　reduces　the　thickness　of　the　Schottky　barrier　between　the　metal　and　SiC,　and　the　formation　of　graphene　sheets　on　the　irradiated　SiC　surface　reduces　the　barrier　height,　resulting　in　the　direct　formation　of　Ohmic　contacts.　Our　findings　thus　demonstrate　the　potential　of　this　laser　treatment　method　to　achieve　Ohmic　contacts　between　n-type　SiC　and　a　broad　range　of　metal　electrodes　without　requiring　high-temperature　annealing.