A　novel　SiGe　HBT　low　noise　amplifier　(LNA)　was　designed　by　adopting　the　feedback　resistors,　which　are　low　cost　and　implemented　easily　in　VLSI　technology.　Due　to　the　absence　of　on-chip　spiral　inductor,　the　die　area　of　this　novel　LNA　decreases　noticeably.　The　novel　resistive　feedback　structure　of　the　LNA　comprising　a　shunt　feedback　loop　and　a　series　feedback　loop,　wherein　the　shunt　feedback　loop　is　used　for　the　adjusting　the　noise　performance,　while　the　series　feedback　loop　is　used　for　adjusting　the　gain　performance.　Hence,　by　using　the　novel　feedback　technique,　the　traditional　conflict　between　the　gain　and　the　noise　performance　could　be　resolved　successfully　for　the　amplifier.　Finally,　this　monolithic　SiGe　HBT　LNA　with　the　novel　feedback　configuration　was　fabricated　in　0.35-m　Si　BiCMOS　technique,　and　the　die　area　of　the　LNA　is　only　0.282mm2.　The　measurement　results　show　that　in　the　band　from　0.2　to1.2GHz,　the　minimum　noise　figure(NF)　is　2.5dB,　the　maximum　gain　is　as　high　as　27dB,　and　both　the　input　and　output　reflections(S11,　S22)　are　less　than　9dB.　These　results　provide　a　significant　guide　for　the　design　and　development　of　integrated　circuit　based　on　Si　technology.　©　2011　IEEE.