Mode-locked fiber laser with few-layer epitaxial graphene grown on 6H-SiC substrates - Details

Author：

Liu, Jiang (Liu, Jiang.) | Wei, Rusheng (Wei, Rusheng.) | Xu, Xiangang (Xu, Xiangang.) | Wang, Pu (Wang, Pu.)

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Abstract：

Few-layer　epitaxial　graphene　grown　on　6H　silicon　carbide　(SiC)　wafers　by　thermal　decomposition　was　used　as　novel　saturable　absorbers　for　mode-locking　of　ytterbium-doped　fiber　lasers,　which　generated　19nJ　single　pulse　energy　at　1.05MHz　repetition　rate.　©　2011　OSA.

Keyword：

Silicon wafers Silicon carbide Fiber lasers Saturable absorbers Locks (fasteners) Pulse repetition rate Decomposition Graphene Mode-locked fiber lasers

Author Community：

[ 1 ] [Liu, Jiang]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wei, Rusheng]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 3 ] [Xu, Xiangang]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 4 ] [Wang, Pu]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

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Mode-locked fiber laser with few-layer epitaxial graphene grown on 6H-SiC substrates
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Year： 2011

Language： English

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 14

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材料科学与工程学院本学院/部未明确归属的数据

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