Mode-locked fiber laser with few-layer epitaxial graphene grown on 6H-SiC substrates - Details

Author：

Liu, Jiang (Liu, Jiang.) | Wei, Rusheng (Wei, Rusheng.) | Xu, Xiangang (Xu, Xiangang.) | Wang, Pu (Wang, Pu.) (Scholars：王璞)

Indexed by：

EI Scopus

Abstract：

Few-layer　epitaxial　graphene　grown　on　6H　silicon　carbide　(SiC)　wafers　by　thermal　decomposition　was　used　as　novel　saturable　absorbers　for　mode-locking　of　ytterbium-doped　fiber　lasers,　which　generated　19nJ　single　pulse　energy　at　1.05MHz　repetition　rate.　©　OSA/CLEO　2011.

Keyword：

Locks (fasteners) Fiber lasers Decomposition Pulse repetition rate Saturable absorbers Silicon wafers Silicon carbide Graphene Mode-locked fiber lasers

Author Community：

[ 1 ] [Liu, Jiang]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wei, Rusheng]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 3 ] [Xu, Xiangang]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 4 ] [Wang, Pu]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

Reprint Author's Address：

Email：

wangpuemail@bjut.edu.cn

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Related Keywords：

Mode-locked fiber laser with few-layer epitaxial graphene grown on 6H-SiC substrates
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Mode-locked Yb-doped fiber laser with epitaxial graphene grown on 6H-SiC substrates
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Mode-locked 2 μm thulium-doped fiber laser with graphene oxide saturable absorber
2012，Quantum Electronics and Laser Science Conference, QELS 2012

Source ：

Year： 2011

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 10

Affiliated Colleges：

材料科学与工程学院本学院/部未明确归属的数据

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