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Author:

Wang, Lu (Wang, Lu.) | Feng, Shiwei (Feng, Shiwei.) (Scholars:冯士维) | Guo, Chunsheng (Guo, Chunsheng.) | Zhang, Guangchen (Zhang, Guangchen.)

Indexed by:

EI Scopus

Abstract:

This paper analyzes the degradation of the electrical, optical and thermal characteristics of the light-emitting diodes (LEDs). Two types of LEDs which are defined as sample A and sample B are tested. Their electrical, optical and thermal characteristics have been continuously monitored during the test. The results of our analysis demonstrate that ohmic contacts and resistivity of bulk are stable over stress time; the die attach materials of sample B get worse, but the active layer is better than sample A; the depletion region of sample A is getting worse and sample B is stable. The analysis above offers a new method to find which part degrades seriously. ©2009 IEEE.

Keyword:

Failure analysis III-V semiconductors Gallium nitride Light emitting diodes Ohmic contacts Integrated circuits Failure (mechanical)

Author Community:

  • [ 1 ] [Wang, Lu]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Feng, Shiwei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Guo, Chunsheng]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Zhang, Guangchen]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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Source :

Year: 2009

Page: 472-475

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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