Thermal conductivity studies of a GaN-sapphire structure by combined scanning thermal microscopy and electron backscatter diffraction - Details

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Abstract：

Scanning　thermal　microscope　(SThM)　and　electron　backscatter　diffraction　(EBSD)　techniques　were　used　to　investigate　the　local　thermal-conductivity　of　a　GaN-buffer-sapphire　heterostructure.　Compared　with　GaN　epilayer,　buffer　layer　displayed　the　low　thermal-conductivity　and　the　high　strain　state　due　to　the　lattice　distortion.　©2009　IEEE.

Keyword：

III-V semiconductors Sapphire Failure (mechanical) Integrated circuits Strain Buffer layers Gallium nitride Electron diffraction Failure analysis Backscattering Thermal conductivity

Author Community：

[ 1 ] [Zhang, Y.F.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wang, L.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Ji, Y.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Han, X.D.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Zhang, Z.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Heiderhoff, R.]Department of Electronics, Faculty of Electrical, University of Wuppertal, Rainer-Gruenter-Str. 21, Wuppertal D-42119, Germany
[ 7 ] [Tiedemann, A.-K.]Department of Electronics, Faculty of Electrical, University of Wuppertal, Rainer-Gruenter-Str. 21, Wuppertal D-42119, Germany
[ 8 ] [Balk, L.J.]Department of Electronics, Faculty of Electrical, University of Wuppertal, Rainer-Gruenter-Str. 21, Wuppertal D-42119, Germany

Reprint Author's Address：

[ji, y.]institute of microstructure, property of advanced materials, beijing university of technology, beijing 100124, china

Email：

jiyuan@bjut.edu.cn

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Source ：

Year： 2009

Page： 520-522

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 4

Affiliated Colleges：

材料科学与工程学院本学院/部未明确归属的数据

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