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Abstract：
Local lifetime control is obtained by means of local platinum doping using platinum gettering through the vacancy defects induced by proton irradiation. Assisted by total lifetime control using 4MeV electron irradiation, a fast soft recovery power diode is manufactured. The reverse recovery time and softness is 110ns and 1 respectively under test condition of IF=25A, VB=400V, di/dt=80A/μs, room temperature. It is equivalent to that of the international advanced diodes SML30EUZ12B. But the reverse leakage under VB=400V is only 208nA at room temperature, only half of SML30EUZ12B＇s. The performance of such diode is on top of congeneric products. © 2007 IEEE.
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ISSN： 0275-9306
Year： 2007
Page： 991-994
Language： English
Cited Count：
SCOPUS Cited Count： 2
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 7
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