Indexed by：
Abstract：
A two-stage broadband low noise amplifier (LNA) was designed. The LNA was implemented on a Teflon substrate using GaAs FET ATF-10136 and PHEMT ATF-34143 with micro-strip circuit technology. This LNA resulted in a noise figure of 1.1dB, and 21dB gain over 3.6 to 4.2 GHz range. The input and output VSWR are all less than 2.8. The computer simulated results were coincident with that of the test. © 2007 IEEE.
Keyword：
Reprint Author's Address：
Email：
Source ：
Year： 2007
Page： 458-461
Language： English
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count： 7
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 8
Affiliated Colleges：
