The　(001)　oriented　BiFeO3　thin　film　was　deposited　on　the　Nb:SrTiO3　substrate　by　radio　frequency　magnetron　sputtering　technology,　and　the　bipolar　resistive　switching　effect　was　observed　in　the　BiFeO3/Nb:　SrTiO3　heterostructure.　The　results　showed　that　the　ratio　between　the　high　resistance　and　low　resistance　was　more　than　two　orders　at　a　reading　pulse　of　-0.5　V　and　it　exhibited　excellent　retention　over　3600　s.　The　current　density-voltage　characteristic　was　dominated　by　the　space-charge-limited　conduction.　The　resistive　switching　effect　of　the　structure　was　attributed　to　the　trapping/detrapping　of　the　charge　carriers.