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Author:

Zhang, Shan-Shan (Zhang, Shan-Shan.) | Yang, Ding-Feng (Yang, Ding-Feng.) | Shaheen, Nusrat (Shaheen, Nusrat.) | Shen, Xing-Chen (Shen, Xing-Chen.) | Xie, Dan-Dan (Xie, Dan-Dan.) | Yan, Yan-Ci (Yan, Yan-Ci.) | Lu, Xu (Lu, Xu.) | Zhou, Xiao-Yuan (Zhou, Xiao-Yuan.)

Indexed by:

Scopus SCIE CSCD

Abstract:

In this study, we report the effect of Zn doping on the thermoelectric properties of Co1-x Zn (x) SbS0.85Se0.15 solid solutions (x = 0, 0.02, 0.05, 0.08). The results show the dimensionless figure of merit (zT) increases from 0.17 to 0.34 at 875 K for Co0.95Zn0.05SbS0.85Se0.15 sample, due to the noticeable decrease in the lattice thermal conductivity by introducing point defect, which is further confirmed by an analysis based on the Debye-Callaway-Klemens model. Meanwhile, the thermoelectric power factor is maintained at high temperatures. This work highlights the important role of point defect in improving the thermoelectric performance of CoSbS-based compounds.

Keyword:

CoSbS Thermoelectric performance Point defect Thermal conductivity

Author Community:

  • [ 1 ] [Zhang, Shan-Shan]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
  • [ 2 ] [Shaheen, Nusrat]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
  • [ 3 ] [Shen, Xing-Chen]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
  • [ 4 ] [Xie, Dan-Dan]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
  • [ 5 ] [Yan, Yan-Ci]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
  • [ 6 ] [Lu, Xu]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
  • [ 7 ] [Zhou, Xiao-Yuan]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
  • [ 8 ] [Yang, Ding-Feng]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Lu, Xu]Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China

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Source :

RARE METALS

ISSN: 1001-0521

Year: 2018

Issue: 4

Volume: 37

Page: 326-332

8 . 8 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:260

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 18

SCOPUS Cited Count: 18

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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