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Author:

Guo Chun-Sheng (Guo Chun-Sheng.) | Zhang Yan-Feng (Zhang Yan-Feng.) | Wan Ning (Wan Ning.) | Li Rui (Li Rui.) | Zhu Hui (Zhu Hui.) | Feng Shi-Wei (Feng Shi-Wei.) (Scholars:冯士维)

Indexed by:

EI Scopus SCIE PKU CSCD

Abstract:

The degradation of a device can be described by the degradation model in the accelerated tests. Because the degradation is closely related to the degradation mechanism, which reflects the intrinsic physical or chemical reactions, the degradation model can be established based on the temperature effect on the reaction rate and the change of reaction volume concentration in the physical/chemical reactions. Different degradation processes can be studied using the degradation model, including both the monotonic and nonmonotonic degradation processes. Moreover, the accelerated test is carried out for the GaN LED, figuring out the parameters for the degradation model, the ratio of different degradation processes, and the time constant.

Keyword:

GaN LED chemical kinetics parameter degradation model accelerated test

Author Community:

  • [ 1 ] [Guo Chun-Sheng]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang Yan-Feng]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wan Ning]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Li Rui]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Zhu Hui]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Feng Shi-Wei]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Guo Chun-Sheng]Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

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Source :

ACTA PHYSICA SINICA

ISSN: 1000-3290

Year: 2013

Issue: 21

Volume: 62

1 . 0 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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