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Author:

亢宝位 (亢宝位.)

Indexed by:

CQVIP

Keyword:

增强结构 耐压层 集电区 表面层 性能改进 NPT 栅结构 合成 发明 集电结 SPT IGBT 沟槽 结构改进 芯片

Author Community:

  • [ 1 ] [亢宝位]北京工业大学

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Source :

电力电子

Year: 2006

Page: 10-15

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count: -1

Chinese Cited Count:

30 Days PV: 16

Affiliated Colleges:

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