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Author:

Hao, H. (Hao, H..) | Tian, J. (Tian, J..) | Shi, Y. W. (Shi, Y. W..) | Lei, Y. P. (Lei, Y. P..) (Scholars:雷永平) | Xia, Z. D. (Xia, Z. D..)

Indexed by:

EI Scopus SCIE

Abstract:

In the current research, trace rare earth (RE) element Y was incorporated into a promising lead-free solder, Sn3.8Ag0.7Cu, in an effort to improve the comprehensive properties of Sn3.8Ag0.7Cu solder. The range of Y content in Sn3.8Ag0.7Cu solder alloys varied from 0 wt.% to 1.0 wt.%. As an illustration of the advantage of Y doping, the melting temperature, wettability, mechanical properties, and microstructures of Sn3.8Ag0.7CuY solder were studied. Trace Y additions had little influence on the melting behavior, but the solder showed better wettability and mechanical properties, as well as finer microstructures, than found in Y-free Sn3.8Ag0.7Cu solder. The Sn3.8Ag0.7Cu0.15Y solder alloy exhibited the best comprehensive properties compared to other solders with different Y content. Furthermore, interfacial and microstructural studies were conducted on Sn3.8Ag0.7Cu0.15Y solder alloys, and notable changes in microstructure were found compared to the Y-free alloy. The thickness of an intermetallic compound layer (IML) was decreased during soldering, and the growth of the IML was suppressed during aging. At the same time, the growth of intermetallic compounds (IMCs) inside the solder was reduced. In particular, some bigger IMC plates were replaced by fine, granular IMCs.

Keyword:

Y SnAgCu interfacial reaction wettability lead-free solder rare earth

Author Community:

  • [ 1 ] Beijing Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China

Reprint Author's Address:

  • [Hao, H.]Beijing Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2007

Issue: 7

Volume: 36

Page: 766-774

2 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 59

SCOPUS Cited Count: 71

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

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