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Author:

王必本 (王必本.) | 王波 (王波.) (Scholars:王波) | 朱满康 (朱满康.) | 张兵 (张兵.) | 严辉 (严辉.)

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CQVIP PKU CSCD

Abstract:

利用负偏压增强热丝化学气相沉积系统,在沉积有过渡层Ta和催化剂层NiFc的Si衬底上制备得到了碳纳米管.研究发现,负偏压对NiFe层的裂解和碳纳米管的生长都有很大的影响.本文详细分析和讨论了负偏压在碳纳米管生长过程中的作用.

Keyword:

碳纳米管 热丝CVD 负偏压

Author Community:

  • [ 1 ] [王必本]北京工业大学
  • [ 2 ] [王波]北京工业大学
  • [ 3 ] [朱满康]北京工业大学
  • [ 4 ] [张兵]北京工业大学
  • [ 5 ] [严辉]北京工业大学

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Source :

功能材料

ISSN: 1001-9731

Year: 2004

Issue: z1

Volume: 35

Page: 2866-2869

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count: -1

Chinese Cited Count:

30 Days PV: 2

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