We　demonstrate　the　surface　defect　type,　density　and　related　electrical　modification　of　graphene　sheet　generated　by　193-nm　ArF　excimer　laser　irradiation　on　n-type　4H-SiC.　The　charge　density　difference　and　partial　density　of　states　(PDOS)　carried　out　by　density　functional　theory　(DFT)　calculations　predict　the　graphene　with　lattice　imperfection　can　induce　virtual　bound　states　at　the　vacancy　sites　and　Fermi　level　shift　compared　to　perfect　graphene.　The　surface　defects　density　of　laser　generated　graphene　is　characterized　by　nanoscale　electrical　measurements　using　the　conductive　atomic　force　microscope　(c-AFM).　The　corresponding　current-voltage　(I-V)　curves　show　that　the　electronic　charge　transfers,　thereby　electrical　conductivities　of　laser　generated　graphene,　are　influenced　by　the　lattice　defects.　The　defect　densities　are　tunable　by　change　laser　fluence　and　pulse　number.　This　research　provides　an　understanding　of　the　interfacial　transport　properties　between　laser　generated　graphene　and　4H-SiC　through　a　detailed　analysis　of　surface　defects.　(C)　2020　The　Authors.　Published　by　Elsevier　B.V.