In　this　paper,　the　sub-micron　graphene　ridge　structures　commonly　observed　in　laser　irradiation　on　the　4H-SiC　surface　are　analyzed　to　explore　the　formation　mechanism　and　the　electrical　transfer　properties.　The　cross-section　morphologies　of　irradiated　SiC　indicate　that　the　atomic　arrangement　of　graphene　sheets　in　flat　and　ridge　areas　is　different　significantly.　The　atom　distributed　direction　of　laser　induced　graphene　layer　is　more　prefer　to　be　morphology-dependent　rather　than　the　SiC　atomic　distribution-dependent.　The　difference　of　carbon　atoms　arrangement　is　considered　to　be　the　reason　of　the　various　electrical　transport　properties　on　the　graphene　ridge　and　the　flat　graphene　sheets.　The　electron　transfer　behavior　along　the　gap　between　graphene　layers　is　found　to　be　stronger　than　that　from　layer　to　layer.　The　formation　of　such　graphene　sheets　is　attributed　to　the　high　energy　photons　irradiation-induced　decomposition　of　SiC　and　the　reconstruction　of　carbon　atoms　on　SiC　surface.　The　study　on　the　formation　of　laser　induced　graphene　ridge　with　different　atomic　distributions　and　the　corre-sponding　mechanism　of　electrical　transport　property　is　significant　for　the　growth　analysis　of　graphene　on　silicon　carbide　during　thermal　destruction.