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Author:

Wang, Han (Wang, Han.) | Wu, Qing (Wu, Qing.) | Wang, Chao (Wang, Chao.) | Wang, Ruzhi (Wang, Ruzhi.)

Indexed by:

EI Scopus SCIE

Abstract:

Nowadays, the growing number of electronic components in integrated circuit(IC) chips require higher cooling efficiency. Here we propose a universal efficient cooling structure based on Micro-Channel Heat Sink (MCHS), which can be applied to heat dissipation of IC chips with uniform and non-uniform heat fluxes. When using GFSMs (Gradually-Higher Fins Spilt-Flow Microstructures) MCHS to cool an IC chip with a uniform heat flux of 100 W/cm2, the thermal resistance and MATD (mean absolute temperature difference) of regular MCHS can be reduced by 57% and 77%. At the same time, the GFSMs MCHS can reduce the thermal resistance to less than 0.28 K/W with only 1/4 of the pressure drop of the regular MCHS, and the thermal resistance can be reduced to below 0.15 K/W with a pump power of 0.04 W. In addition, TTSV (Thermal Through Silicon Via) is combined with a split-flow microstructure to form a three-dimensional heat dissipation structure (3D-HDS). When using 3D-HDS MCHS to cool a chip containing a 1250 W/cm2 heat flux hotspot, simulations show that the thermal resistance and MATD decreased by more than 40% compared to regular MCHS. The cooling structure will have broad application prospects in the field of high-power integrated circuits and electronic cooling. © 2022 Elsevier Ltd

Keyword:

Electronics packaging Efficiency Three dimensional integrated circuits Hazardous materials spills Heat resistance Thermal management (electronics) Microstructure Heat sinks Heat flux Electronic cooling

Author Community:

  • [ 1 ] [Wang, Han]Institute of New Energy Materials and Devices of Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Wu, Qing]North China Research Institute of Electro-Optics, Beijing; 100015, China
  • [ 3 ] [Wang, Chao]Institute of New Energy Materials and Devices of Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Wang, Ruzhi]Institute of New Energy Materials and Devices of Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing University of Technology, Beijing; 100124, China

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Source :

Applied Thermal Engineering

ISSN: 1359-4311

Year: 2022

Volume: 215

6 . 4

JCR@2022

6 . 4 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 16

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