This　paper　presents　an　experimental　investigation　and　a　finite　element　(FE)　analysis　study　on　the　thermal　and　mechanical　behaviors　of　insulated-gate　bipolar　transistor　(IGBT)　power　modules　under　various　operating　conditions.　The　power　cycling　test　conditions　are　provided　by　two　test　benches,　a　direct　current　(DC)　test　bench　and　a　pulse　width　modulation　(PWM)　test　bench.　Infrared　(IR)　camera　acquisition　methods　are　suggested　as　an　approach　for　transient　temperature　measurements　to　estimate　the　effects　of　operating　conditions　and　switching　frequency　on　the　thermal　performance　of　an　IGBT　module.　An　electrical-thermal-mechanical　FE　model　of　an　IGBT　module　is　employed　to　determine　the　stress　in　the　interconnections　of　an　IGBT　module　induced　by　junction　temperature　fluctuations.　Results　indicate　that　the　operating　conditions　significantly　impact　the　maximum　junction　temperature,　the　junction　temperature　increase　rate,　and　the　junction　temperature　distribution　of　an　IGBT　chip　and　the　thermally　induced　stress　in　the　interconnections.　The　switching　frequency　strongly　impacts　the　junction　temperature　of　an　IGBT　chip,　and　the　maximum　junction　temperature　increases　when　the　switching　frequency　increases　due　to　the　increasing　switching　loss.　Furthermore,　the　junction　temperature　variation　induced　by　the　instantaneous　switching　loss　is　estimated　by　the　proposed　IR　camera　measurement　method.