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Author:

Zhang, Qi-Ling (Zhang, Qi-Ling.) | Yao, Shun (Yao, Shun.) | Yang, Cui-Bai (Yang, Cui-Bai.) | Zhang, Yang (Zhang, Yang.) | Chen, Bing-Zhen (Chen, Bing-Zhen.) | Chang, Xiao-Yang (Chang, Xiao-Yang.) | Wang, Zhi-Yong (Wang, Zhi-Yong.) (Scholars:王智勇)

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EI Scopus PKU CSCD

Abstract:

In order to study the GaInAs/GaAsP multiple quantum well solar cells (MQW-SC) with different periods, double-junction solar cell samples with different periods quantum well (QW) and reference sample without QW were grown by metalorganic chemical vapor deposition (MOCVD). The crystal quality of the samples was judged by high resolution X-ray diffraction (HXRD) and high resolution transmission electron microscopy (TEM). I-V curves and external quantum efficiency (EQE) of samples were measured under AM0 (1×) spectra. Relative to the non-QW sample, the absorption spectra of QW samples extend from 890 nm to 954 nm, the highest external quantum efficiency of the extending spectra achieves 75.18%, the conversion efficiency increases by 2.77%. With the increased periods of quantum wells structure, the response of the extending spectra and the longer wavelengths (700-890 nm) in the conventional spectra increase, while in the shorter wavelengths (300-700 nm) the response has a fall. Eventually, the short circuit current and the efficiency of the cells are improved and finally tend to be steady. © 2016, Science Press. All right reserved.

Keyword:

Metallorganic chemical vapor deposition X ray diffraction analysis Solar cells Quantum efficiency High resolution transmission electron microscopy Semiconductor quantum wells Efficiency

Author Community:

  • [ 1 ] [Zhang, Qi-Ling]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Yao, Shun]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Yang, Cui-Bai]Redsolar New Energy Technology Co. Ltd., Zhongshan; 528437, China
  • [ 4 ] [Zhang, Yang]Redsolar New Energy Technology Co. Ltd., Zhongshan; 528437, China
  • [ 5 ] [Chen, Bing-Zhen]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Chang, Xiao-Yang]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Wang, Zhi-Yong]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address:

  • [yao, shun]institute of laser engineering, beijing university of technology, beijing; 100124, china

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

Year: 2016

Issue: 6

Volume: 37

Page: 701-705

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 13

Online/Total:1007/10576716
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