In　order　to　lower　the　threshold　current　and　raise　the　efficiency　of　808　nm　laser　diode,　traditional　no　strain　quantum　well　(QW)　is　replaced　by　Al0.3Ga0.7　As/InAIGaAs/Al0.3　Ga0.7　As　compression　strain　QW　as　the　active　region.　The　device　structure　is　optimized　firstly,　then　the　structure　is　grown　by　metal　organic　chemical　vapor　deposition　(MOCVD).　By　using　the　proper　MOCVD　epitaxial　condition,　the　uniformity　of　the　QW　photoluminescence　(PL)　peak　wavelength　reaches　0.1%.　For　devices　of　50　μm　strip　width　and　750　μm　cavity　length　after　facet　coating,　the　threshold　current　is　as　low　as　81　mA,　the　slope　efficiency　is　1.22　W/A,　and　the　wall-plug　efficiency　reaches　53.7%.　By　fitting　the　external　quantum　efficiency　and　the　cavity　length,　a　cavity　loss　of　2　cm-1　and　internal　quantum　efficiency　of　90%　are　obtained.　All　results　show　that　the　compression　strain　laser　diodes　have　better　characteristics.