Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD - Details

Author：

Indexed by：

EI Scopus PKU CSCD

Abstract：

InGaN/GaN　MQWs　structures　were　grown　by　MOCVD.　The　effects　of　the　growth　interruption　time　on　the　optical　and　structural　properties　of　InGaN/GaN　MQWs　were　investigated.　The　growth　interruption　can　improve　the　interface　quality,　increase　the　intensity　of　photoluminescence　(PL)　and　electroluminescence　(EL);　but　if　the　interruption　time　was　too　long,　the　well　thickness　and　the　average　in　composition　of　MQWs　decreased,　and　the　EL　intensity　also　decreased　due　to　poor　interface　quality　and　impurity　derived　by　growth　interruption.

Keyword：

Photoluminescence Metallorganic chemical vapor deposition X ray diffraction analysis Structural properties Optical properties Semiconductor quantum wells Electroluminescence Growth (materials) Gallium nitride

Author Community：

[ 1 ] [Niu, Nan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wang, Huai-Bing]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Jian-Ping]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Nai-Xin]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address：

Email：

pitt@emails.bjut.edu.cn

Show more details

Related Keywords：

Effects of sapphire substrate mis-cut angle on the properties of GaN films
2006，Journal of Functional Materials
Investigation of non-doped GaN grown on sapphire substrate
2012，Chinese Journal of Luminescence
InAlGaAs quantum well 808 nm laser diode with low threshold current and high efficiency
2006，Chinese Journal of Lasers
Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off
2006，Chinese Optics Letters

Source ：

Journal of Optoelectronics Laser

ISSN： 1005-0086

Year： 2007

Issue： 4

Volume： 18

Page： 422-424

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 4

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

Get Fulltext

Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to