• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
搜索

Author:

Lu, Zeyu (Lu, Zeyu.) | Chen, Weijian (Chen, Weijian.) | Liu, Xu (Liu, Xu.)

Indexed by:

CPCI-S EI

Abstract:

This article presents a high-voltage Tolerant and current-accurate neural stimulator using smic18 technology and 3.3V deep N-well technology. The circuit is designed with adaptive bias circuit design, and the high voltage tolerance of 6 × VDD is realized by transistor stack technology, which prevents the voltage overload and gate oxide reliability of low voltage transistors. When the DC input voltage is 3.3V, the stimulator can withstand a maximum working voltage of 19.8V. The chip can generate adjustable input stimulation current to match different electrode models, with an output current range of 0-1mA. The mismatch of the biphasic stimulation output current of the stimulator is relatively small, with a mismatch of 0.225 n A at 100 u A and 2.845nA at 600uA. © 2024 IEEE.

Keyword:

CMOS integrated circuits Low power electronics Transistors Neurons Integrated circuit design Bias voltage Radiation hardening

Author Community:

  • [ 1 ] [Lu, Zeyu]Beijing University of Technology, Faculty of Information Technology, Beijing, China
  • [ 2 ] [Chen, Weijian]Beijing University of Technology, Faculty of Information Technology, Beijing, China
  • [ 3 ] [Liu, Xu]Beijing University of Technology, Faculty of Information Technology, Beijing, China

Reprint Author's Address:

Email:

Show more details

Related Keywords:

Related Article:

Source :

Year: 2024

Page: 562-565

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

Affiliated Colleges:

Online/Total:388/10650564
Address:BJUT Library(100 Pingleyuan,Chaoyang District,Beijing 100124, China Post Code:100124) Contact Us:010-67392185
Copyright:BJUT Library Technical Support:Beijing Aegean Software Co., Ltd.