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Author:

Chen, Yi-Xin (Chen, Yi-Xin.) | Sheng, Guang-Di (Sheng, Guang-Di.) | Meng, Li-Li (Meng, Li-Li.) | Ma, Li (Ma, Li.) (Scholars:李明爱) | Li, Chun-Wei (Li, Chun-Wei.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

The reason for low extraction efficiency of AlGaInP light emitting diodes (LEDs) has been analyzed, and there is a significant gap between the internal efficiency of LEDs and their external efficiency. The reason is the narrow escape cone for light in high refractive index semiconductors. The application of nano-imprint lithography to AlGaInP based LEDs' surface texturing has been done, which is much easier for light to escape from the LED structure and thereby avoids absorption. In this paper, we have demonstrated nearly 100% improvement of luminous intensity in the nano-surface LEDs compared with LEDs with a flat surface. LEDs with nano-surface have higher extraction efficiency, lower heat generated and better optical characteristics than LEDs with a flat surface.

Keyword:

Diodes Extraction Semiconductor diodes Surface roughness Light emission Light emitting diodes Nanoimprint lithography Efficiency Refractive index

Author Community:

  • [ 1 ] [Chen, Yi-Xin]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Sheng, Guang-Di]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Meng, Li-Li]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Ma, Li]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Li, Chun-Wei]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

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Source :

Journal of Optoelectronics Laser

ISSN: 1005-0086

Year: 2011

Issue: 10

Volume: 22

Page: 1451-1454

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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