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Author:

Sun, Hao (Sun, Hao.) | Han, Jun (Han, Jun.) | Li, Jianjun (Li, Jianjun.) | Deng, Jun (Deng, Jun.) | Zou, Deshu (Zou, Deshu.) | Song, Xiaowei (Song, Xiaowei.) | Song, Xinyuan (Song, Xinyuan.) | Shen, Guangdi (Shen, Guangdi.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

The reflective spectra of SiO2/Al, ITO/Al, SiO2/Au, and ITO/Au omni-directional reflector (ODR) structure and the distributional Bragg reflector (DBR) are calculated by computer simulation. The DBR is grown by LP-MOCVD, then the glass/SiO2/Au ODR samples are fabricated by PECVD and magnetron sputtering, and finally the reflective spectra of those samples are measured. The experimental results are approximately in agreement with the simulations. The reflectivity of the SiO2/Au ODR is as high as 91% for 630 nm normal incidence light. The SiO2/Au reflectivity remains a high value when the incidence light angle changes from 20° to 85°. which is much higher than the reflectivity of DBR. The results from the LED device indicates that light intensity on axis of the LED with ODR structures increases by 115% compared with that of LED without DBR, and increases by 28% compared with that of the LED with DBR. These results show the ODR structure can strongly increase the luminous efficiency of the red LEDs.

Keyword:

Distributed Bragg reflectors Reflection Plasma enhanced chemical vapor deposition Computer simulation Light emitting diodes

Author Community:

  • [ 1 ] [Sun, Hao]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Han, Jun]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Li, Jianjun]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Deng, Jun]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Zou, Deshu]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Song, Xiaowei]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Song, Xinyuan]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 8 ] [Shen, Guangdi]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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Source :

Chinese Journal of Semiconductors

ISSN: 0253-4177

Year: 2007

Issue: 12

Volume: 28

Page: 1952-1956

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 13

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