Determining method of the thickness of the distributed Bragg reflector grown by metal-organic chemical vapor depositon - Details

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Abstract：

For　a　vertical-cavity　surface-emitting　laser　(VCSEL),　the　epilayer　thickness　accuracy　is　very　important.　The　influence　of　the　thickness　deviation　on　the　reflection　spectrum　of　semiconductor　materials　DBR　was　analyzed　using　the　transfer　matrix　method.　By　the　influence,　a　determining　method　of　the　thickness　of　the　DBR　grown　by　MOCVD　was　presented.　Based　on　the　approach,　the　980　nmVCSEL　wafer　was　grown　by　MOCVD,　in　which　center　wavelength　of　the　VCSEL　reflection　spectrum　is　982　nm.　The　results　show　that　the　method　can　be　used　in　verifying　the　thickness　of　the　epitaxy　materials　and　growth　parameters　of　the　MOCVD　and　provide　the　reliable　information　for　the　VCSEL　growth.

Keyword：

Metallorganic chemical vapor deposition Reflection Thin films Epitaxial growth Mirrors Semiconductor materials Optical films Thickness measurement

Author Community：

[ 1 ] [Gai, Hong-Xing]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Chen, Jian-Xin]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Lian, Peng]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Yu, Bo]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Li, Jian-Jun]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Laboratory, Department of Electrical Engineering, Beijing University of Technology, Beijing 100022, China