Temperature characteristics of microwave power SiGe HBTs - Details

Author：

Yang, Jingwei (Yang, Jingwei.) | Zhang, Wanrong (Zhang, Wanrong.) | Jin, Dongyue (Jin, Dongyue.) | Qiu, Jianjun (Qiu, Jianjun.) | Gao, Pan (Gao, Pan.)

Indexed by：

EI Scopus PKU CSCD

Abstract：

Temperature　characteristics　of　SiGe　HBT　are　studied.　Experiment　data　show　that　the　variation　of　VBE　with　temperature　of　SiGe　HBT　is　smaller　than　that　of　homo-junction　silicon　BJT.　The　needed　emitter　ballast　resistance　in　SiGe　HBT　is　thus　smaller　than　that　in　Si　BJT　when　thermal　stability　of　transistors　is　improved.　At　the　same　time,　the　negative　differential　resistance　characteristics　of　SiGe　HBT　is　also　observed　at　a　high　collector-emitter　voltage　and　high　current,　which　can　prevent　the　thermal　instability　of　power　transistors　effectively,　and　this　is　not　the　case　with　Si　devices.　Therefore,　SiGe　HBT　is　proved　to　be　more　suitable　for　microwave　power　devices.

Keyword：

Semiconducting silicon compounds Design Current voltage characteristics Heterojunction bipolar transistors Thermodynamic stability Semiconducting germanium compounds

Author Community：

[ 1 ] [Yang, Jingwei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Jin, Dongyue]Physics Department, Liaoning University, Shenyang 110036, China
[ 4 ] [Qiu, Jianjun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Gao, Pan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address：

Email：

jwang@emails.bjut.edu.cn

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Related Keywords：

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Decrease of SiGe HBTs' base serial resistance with novel structure and process
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Research on improvement of the high frequency performances of SiGe HBT by the high resistivity Si substrate
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The design of SiGe HBT direct-coupled LNA
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Source ：

Chinese Journal of Semiconductors

ISSN： 0253-4177

Year： 2006

Issue： SUPPL.

Volume： 27

Page： 231-234

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 7

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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