Decrease of SiGe HBTs' base serial resistance with novel structure and process - Details

Author：

Shi, Chen (Shi, Chen.) | Yang, Weiming (Yang, Weiming.) | Liu, Sujuan (Liu, Sujuan.) | Xu, Chen (Xu, Chen.) (Scholars：徐晨) | Chen, Jianxin (Chen, Jianxin.)

Indexed by：

EI Scopus PKU CSCD

Abstract：

With　the　novel　modulated　doping　QW　base　and　buried　metal　self-align　process,　the　base　lateral　resistance　and　contact　resistance　of　ultra-thin-base　small-size　SiGe　HBTs　are　decreased　by　42%　and　55%　respectively,　which　provides　an　effective　method　of　resolution　on　base　serial　resistance.

Keyword：

Semiconductor device structures Semiconducting silicon compounds Electric resistance Semiconductor device testing Heterojunction bipolar transistors Semiconducting germanium compounds Semiconductor quantum wells Semiconductor device manufacture

Author Community：

[ 1 ] [Shi, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Yang, Weiming]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Sujuan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xu, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Chen, Jianxin]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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Email：

brilliantme@sina.com

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Source ：

Research and Progress of Solid State Electronics

ISSN： 1000-3819

Year： 2005

Issue： 2

Volume： 25

Page： 255-259

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 9

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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