Multi-finger power SiGe HBT with non-uniform finger spacing - Details

Author：

Jin, Dongyue (Jin, Dongyue.) | Zhang, Wanrong (Zhang, Wanrong.) | Shen, Pei (Shen, Pei.) | Xie, Hongyun (Xie, Hongyun.) | Wang, Yang (Wang, Yang.)

Indexed by：

EI Scopus PKU CSCD

Abstract：

A　multi-finger　power　SiGe　heterojunction　bipolar　transistor　(HBT)　with　non-uniform　finger　spacing　was　fabricated　to　improve　thermal　stability.　Experimental　results　show　that　the　peak　temperature　is　reduced　by　22　K　compared　with　that　of　an　HBT　with　uniform　finger　spacing　in　the　same　operating　conditions.　The　temperature　profile　across　the　device　can　be　improved　at　different　biases　for　the　same　HBT　with　non-uniform　finger　spacing.　Because　of　the　decrease　in　peak　temperature　and　the　improvement　of　temperature　profile,　the　power　SiGe　HBT　with　non-uniform　spacing　can　operate　at　higher　bias　and　hence　has　higher　power　handling　capability.

Keyword：

Scanning electron microscopy Semiconducting silicon compounds Thermodynamic stability Heterojunction bipolar transistors Semiconducting germanium compounds

Author Community：

[ 1 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Shen, Pei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xie, Hongyun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Wang, Yang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address：

Email：

jindongyue@sohu.com

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Related Keywords：

Temperature characteristics of microwave power SiGe HBTs
2006，Chinese Journal of Semiconductors
Decrease of SiGe HBTs' base serial resistance with novel structure and process
2005，Research and Progress of Solid State Electronics
Research on improvement of the high frequency performances of SiGe HBT by the high resistivity Si substrate
2007，Research and Progress of Solid State Electronics
Improving the high frequency performance of SiGe HBT with new lateral structure and process
2006，ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Source ：

Chinese Journal of Semiconductors

ISSN： 0253-4177

Year： 2007

Issue： 10

Volume： 28

Page： 1527-1531

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 9

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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