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In this paper, the impact of punch-through stop (PTS) doping and fin angle on the total ionizing dose (TID) response of 14nm bulk FinFETs are investigated by 3D TCAD simulation. The off-state leakage current (Ioff) degradation induced by TID irradiation is effectively reduced with the increase of PTS doping concentration and depth. The optimized PTS doping condition is illustrated to improve the TID hardness of bulk FinFETs. Besides, the impact of fin angle on TID response is also investigated, which shows limited impact on the performance degradation. The results may provide guideline for radiation hardening process design of bulk FinFETs. © 2018 IEEE.
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Year： 2018
Language： English
Cited Count：
SCOPUS Cited Count： 7
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 7
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