Indexed by:
Abstract:
We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 9.4-GHz pulse train with a pulse duration of ~5 ps. © OSA 2013.
Keyword:
Reprint Author's Address:
Email:
Source :
Year: 2013
Page: JTh2A.20
Language: English
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 7
Affiliated Colleges: