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Abstract：
The InP cap layer plays a significant role towards improving the performance of the InP/InGaAs p-i-n photodiode. However, the measurements and simulation confirm that it also induces wavelength-dependent absorption losses and a non-flat photo-responsivity curve due to the reflections from a multilayer structure. © 2004 IEEE.
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Year： 2004
Volume： 3
Page： 2332-2334
Language： English
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WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 6
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