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Abstract：
ZnO thin films were prepared on Na-Ca-Si glass substrate (microscope slides) by Sol-Gel process, and the mechanism of ZnO thin film prepared by Sol-Gel technique was discussed by DTA for the first time. The thin film was analyzed by SEM, XRD and UVS. The results showed that the thin film with strongly preferred orientation of C-axis perpendicular to the substrate surface was the crystalline phase of hexagonal wurtzite. Its surface was homogenous, dense and crack-free. The thin film was composed of plentiful asteroid crystal, the size of which is 10 nmsimilar to30 nm approximately. The transmittance of the thin film in visible region was above 90%. The results also showed that the thickness of single dip-coating was about 75 nm. The wavelength 414 nm emission was observed in ZnO thin film, being excited with 313 nm light beam.
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RARE METAL MATERIALS AND ENGINEERING
ISSN： 1002-185X
Year： 2003
Volume： 32
Page： 564-567
0 . 7 0 0
JCR@2022
ESI Discipline： MATERIALS SCIENCE;
JCR Journal Grade：2
Cited Count：
WoS CC Cited Count： 2
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 5
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