In　this　study,　the　fabrication　and　characterization　of　AlGaInP-based　light-emitting　diodes　(LEDs)　with　further　improvement　by　the　design　of　a　SiO2　current　blocking　layer　were　described.　It　was　found　that　with　the　SiO2　CBL,　the　injected　current　can　be　forced　to　spread　outside　instead　of　flowing　directly　downward　under　the　p-pad　electrode.　At　20mA,　as　compared　to　traditional　LEDs,　the　optical　output　power　for　novel　LEDs　is　increased　by　about　30%.　We　found　that　the　novel　LEDs　have　better　saturation　characteristics,　this　improvement　is　contributed　to　more　uniform　of　injection　current　and　less　heat　generation　in　the　novel　LED　chips.