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Author:

Rehman, Khalil Ur (Rehman, Khalil Ur.) | Zubair, Muhammad (Zubair, Muhammad.) | Hassan, Ali (Hassan, Ali.) | Khan, M. Imtiaz (Khan, M. Imtiaz.) | Ahmad, Ishaq (Ahmad, Ishaq.) | Ahmad, Pervaiz (Ahmad, Pervaiz.) | Ali, Hazrat (Ali, Hazrat.) | Ali, Tariq (Ali, Tariq.) | Haris, Muhammad (Haris, Muhammad.)

Indexed by:

EI Scopus SCIE

Abstract:

Zinc oxide (ZnO) nanowires play a pivotal role in the nanoworld due to their broad range of characteristics and applications. In this work, structural and optical properties of ZnO nanowires grown on indium doped tin oxide (ITO) coated glass have been modified by copper (Cu++) ions irradiation at constant energy of 0.7 MeV. The X-ray diffraction (XRD), photoluminescence (PL), and field emission scanning electron microscope (FESEM) are used to examine changes in the nanowires. XRD results show that the crystallite size first decreases and then increases with high ion dose while peaks' intensity decreases continuously with increasing the dose. The absence of (102) plane after irradiation depicts the defects formation. FESEM clearly shows the damage that occurred in the density of nanowires and also depicts the reduced charging effect with increasing dose. The PL spectra indicate the strong near-band edge peak and green luminescence enhancement has been recorded due to low dose ion irradiation.

Keyword:

Defects formation Green luminescence Ions irradiation Radiation damage ZnO nanowires

Author Community:

  • [ 1 ] [Rehman, Khalil Ur]Univ Sci & Technol China, Chinese Acad Sci, Inst Met Res, Hefei, Anhui, Peoples R China
  • [ 2 ] [Rehman, Khalil Ur]Natl Ctr Phys, Islamabad 44000, Pakistan
  • [ 3 ] [Ahmad, Ishaq]Natl Ctr Phys, Islamabad 44000, Pakistan
  • [ 4 ] [Zubair, Muhammad]Univ Punjab, Ctr Excellence Solid State Phys, Lahore, Pakistan
  • [ 5 ] [Zubair, Muhammad]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Hassan, Ali]Shenzhen Univ, Key Lab Optoelect Devices & Syst Guangdong Prov, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
  • [ 7 ] [Hassan, Ali]Shenzhen Univ, Minist Educ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
  • [ 8 ] [Zubair, Muhammad]Abbottabad Univ Sci & Technol, Dept Phys, Havelian, Khyber Pakhtunk, Pakistan
  • [ 9 ] [Khan, M. Imtiaz]Abbottabad Univ Sci & Technol, Dept Phys, Havelian, Khyber Pakhtunk, Pakistan
  • [ 10 ] [Ali, Hazrat]Abbottabad Univ Sci & Technol, Dept Phys, Havelian, Khyber Pakhtunk, Pakistan
  • [ 11 ] [Ali, Tariq]United Arab Emirates Univ, Dept Phys, Al Ain, U Arab Emirates
  • [ 12 ] [Ahmad, Pervaiz]Univ Azad Jammu & Kashmir, Dept Phys, Muzaffarabad 13100, Pakistan
  • [ 13 ] [Haris, Muhammad]Korea Res Inst Chem Technol, Adv Mat Div, Daejeon 34114, South Korea
  • [ 14 ] [Haris, Muhammad]Korea Res Inst Chem Technol, Energy Mat Res Ctr, Daejeon 34114, South Korea

Reprint Author's Address:

  • [Zubair, Muhammad]Abbottabad Univ Sci & Technol, Dept Phys, Havelian, Khyber Pakhtunk, Pakistan;;[Khan, M. Imtiaz]Abbottabad Univ Sci & Technol, Dept Phys, Havelian, Khyber Pakhtunk, Pakistan

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Source :

APPLIED RADIATION AND ISOTOPES

ISSN: 0969-8043

Year: 2021

Volume: 169

1 . 6 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:72

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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