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Author:

Wang, Shaobo (Wang, Shaobo.) | Zeng, Qingwen (Zeng, Qingwen.) | Liu, Danmin (Liu, Danmin.) (Scholars:刘丹敏) | Zhang, Hongguo (Zhang, Hongguo.) | Ma, Lin (Ma, Lin.) | Xu, Guoliang (Xu, Guoliang.) | Liang, Yuntian (Liang, Yuntian.) | Zhang, Zhenlu (Zhang, Zhenlu.) | Wu, Hui (Wu, Hui.) | Che, Renchao (Che, Renchao.) | Han, Xiaodong (Han, Xiaodong.) (Scholars:韩晓东) | Huang, Qingzhen (Huang, Qingzhen.)

Indexed by:

EI Scopus SCIE PubMed

Abstract:

Skyrmions with topologically nontrivial spin textures are promising information carriers in next-generation ultralow power consumption and high-density spintronic devices. To promote their further development and utilization, the search for new room temperature skyrmion-hosting materials is crucial. Considering that most of the previous skyrmion-hosting materials are noncollinear magnets, here, the detection of the topological Hall effect (THE) and the discovery of skyrmions at room temperature are first reported in a centrosymmetric complex noncollinear ferromagnet NdMn2Ge2. Below 330 K, the compound can host stable Bloch-type skyrmions with about 75 nm diameter in a wide window of magnetic field and temperature, including zero magnetic field and room temperature. Moreover, the skyrmions can induce a giant topological Hall effect in a wide temperature range with a maximum value of -2.05 mu Omega cm. These features make the compound attractive for both fundamental research and potential application in novel spintronic devices.

Keyword:

noncollinear ferromagnets skyrmions spintronic devices NdMn2Ge2 topological Hall effect

Author Community:

  • [ 1 ] [Wang, Shaobo]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Danmin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Guoliang]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Liang, Yuntian]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Zhang, Zhenlu]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Zeng, Qingwen]Fudan Univ, Collaborat Innovat Ctr Chem Energy Mat, Dept Mat Sci, Lab Adv Mat, Shanghai 00438, Peoples R China
  • [ 8 ] [Che, Renchao]Fudan Univ, Collaborat Innovat Ctr Chem Energy Mat, Dept Mat Sci, Lab Adv Mat, Shanghai 00438, Peoples R China
  • [ 9 ] [Wu, Hui]NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA
  • [ 10 ] [Huang, Qingzhen]NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA
  • [ 11 ] [Zhang, Hongguo]Beijing Univ Technol, Key Lab Adv Funct Mat, Educ Minist China, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 12 ] [Ma, Lin]Beijing Univ Technol, Key Lab Adv Funct Mat, Educ Minist China, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 刘丹敏

    [Liu, Danmin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China;;[Che, Renchao]Fudan Univ, Collaborat Innovat Ctr Chem Energy Mat, Dept Mat Sci, Lab Adv Mat, Shanghai 00438, Peoples R China;;[Huang, Qingzhen]NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2020

Issue: 21

Volume: 12

Page: 24125-24132

9 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:169

Cited Count:

WoS CC Cited Count: 23

SCOPUS Cited Count: 24

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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