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Author:

Xu, Guoliang (Xu, Guoliang.) | Liu, Danmin (Liu, Danmin.) (Scholars:刘丹敏) | Li, Songyu (Li, Songyu.) | Wu, Yi (Wu, Yi.) | Zhang, Zhenlu (Zhang, Zhenlu.) | Wang, Shaobo (Wang, Shaobo.) | Huang, Zikun (Huang, Zikun.) | Zhang, Yongzhe (Zhang, Yongzhe.) (Scholars:张永哲)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Ternary two-dimentional (2D) materials exhibit diverse physical properties depending on their composition, structure, and thickness. Through forming heterostructures with other binary materials that show similar structure, there can be numerous potential applications of these ternary 2D materials. In this work, we reported the structure of few-layer CrPS4 by X-ray diffraction, transmission electron microscope, and electron-density distribution calculation. We also demonstrated a new application of the CrPS4/MoS2 heterobilayer: visible-infrared photodetectors with type-II staggered band alignment at room temperature. The response of the heterostructure to infrared light results from a strong interlayer coupling that reduces the energy interval in the junction area. Since the intrinsic bandgap of individual components determines wavelengths, the decrease in energy interval allows better detection of light that has a longer wavelength. We used photoluminescence (PL) spectroscopy, Kelvin probe force microscopy (KPFM) under illumination, and electrical transport measurements to verify the photoinduced charge separation between the CrPS4/MoS2 heterostructures. At forward bias, the device functioned as a highly sensitive photodetector, as the wavelength-dependent photocurrent measurement achieved the observation of optical excitation from 532 to 1,450 nm wavelength. Moreover, the photocurrent caused by interlayer exciton reached around 1.2 nA at 1,095 nm wavelength. Our demonstration of the strong interlayer coupling in the CrPS4/MoS2 heterostructure may further the understanding of the essential physics behind binary-ternary transition metal chalcogenides heterostructure and pave a way for their potential applications in visible-infrared devices.

Keyword:

MoS2 interlayer transition CrPS4 visible-infrared photodetector type-II band alignment heterostructure

Author Community:

  • [ 1 ] [Xu, Guoliang]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Danmin]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Wu, Yi]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Shaobo]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Huang, Zikun]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Li, Songyu]Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100083, Peoples R China
  • [ 7 ] [Zhang, Zhenlu]Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
  • [ 8 ] [Zhang, Yongzhe]Beijing Univ Technol, Fac Informat Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 刘丹敏 张永哲

    [Liu, Danmin]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China;;[Zhang, Yongzhe]Beijing Univ Technol, Fac Informat Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

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Source :

NANO RESEARCH

ISSN: 1998-0124

Year: 2021

Issue: 3

Volume: 15

Page: 2689-2696

9 . 9 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:72

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 19

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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