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Author:

Fu, Pan (Fu, Pan.) | Ni, Pei-Nan (Ni, Pei-Nan.) | Wang, Qiu-Hua (Wang, Qiu-Hua.) | Liu, Yu-Fei (Liu, Yu-Fei.) | Wu, Bo (Wu, Bo.) | Chen, Pei-Pei (Chen, Pei-Pei.) | Kan, Qiang (Kan, Qiang.) | Wang, Shuang-Peng (Wang, Shuang-Peng.) | Chen, Hong-Da (Chen, Hong-Da.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Xie, Yi-Yang (Xie, Yi-Yang.)

Indexed by:

EI Scopus SCIE

Abstract:

The orthogonality among optical beams with different orbital angular momentum (OAM) modes presents a new perspective as independent data-carrying channels for multiplexing and demultiplexing. In particular, the theoretically infinite topological charge of OAM beam promises the unbounded capacity in communication systems. As a key part for the advancement of OAM technologies, OAM source has attracted considerable interest and experienced a rapid development. Nevertheless, conventional approaches to create OAM modes mainly rely on the use of bulky optical devices and external laser source, preventing their implementation into a miniaturized system. As a contrast, on-chip generation of OAM beams with a built-in source stands out with several advantages, including small footprint, compactness, portability, and high-power efficiency. In this work, a versatile approach to directly produce OAM modes with on-demand characteristics on a chip is demonstrated. Featuring the judicious combination of the emerging dielectric metasurface with the standard vertical cavity surface-emitting laser (VCSEL) platform, the approach represents a feasible solution to the wide implementation of wafer-level OAM emitters for optoelectronic integrations. Prototype laser chips for the generation of both individual OAM beam and OAM array with novel functionalites, such as controllable directionality and spatially varying topological charge and distribution, are systematically presented.

Keyword:

metasurfaces orbital angular momentum optical vortex vertical cavity surface-emitting lasers on-chip integration

Author Community:

  • [ 1 ] [Fu, Pan]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Qiu-Hua]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Liu, Yu-Fei]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Wu, Bo]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Xie, Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Ni, Pei-Nan]Univ Macau, Inst Appl Phys & Mat Engn, Joint Key Lab Minist Educ, Ave Univ, Taipa 999078, Macau, Peoples R China
  • [ 8 ] [Wang, Shuang-Peng]Univ Macau, Inst Appl Phys & Mat Engn, Joint Key Lab Minist Educ, Ave Univ, Taipa 999078, Macau, Peoples R China
  • [ 9 ] [Wang, Qiu-Hua]Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
  • [ 10 ] [Kan, Qiang]Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
  • [ 11 ] [Chen, Hong-Da]Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
  • [ 12 ] [Chen, Pei-Pei]Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

Reprint Author's Address:

  • [Xie, Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China;;[Ni, Pei-Nan]Univ Macau, Inst Appl Phys & Mat Engn, Joint Key Lab Minist Educ, Ave Univ, Taipa 999078, Macau, Peoples R China;;[Chen, Pei-Pei]Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

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Source :

ADVANCED OPTICAL MATERIALS

ISSN: 2195-1071

Year: 2021

Issue: 24

Volume: 9

9 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:116

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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