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Author:

Meng, Xianrui (Meng, Xianrui.) | Zhang, Ming (Zhang, Ming.) | Xi, Yupeng (Xi, Yupeng.) | Wang, Ruzhi (Wang, Ruzhi.) | Wang, Changhao (Wang, Changhao.) | Wang, Bo (Wang, Bo.)

Indexed by:

EI Scopus

Abstract:

A tunable broadband, polarization insensitive and incident angle insensitive metamaterial terahertz absorber is proposed, which consists of silicon semi-ellipsoid/semi-spherical structure, graphene, dielectric layer and metal back plate. Based on the known results, the electric field results under different chemical potentials of graphene and different structural conditions were analyzed by simulation under the condition of vertical incident TE wave show that under the synergism of continuous and multimode Fabry-Perot resonances formed by silicon semi-ellipsoid/semi-spherical subwavelength structure and multiple discrete plasma resonances excited by graphene the absorption spectrum is smoothed and expanded so that the structure can achieve a wide range of adjustable absorptivity and a broadband absorption characteristic of nearly 100% absorptivity. When the chemical potential of graphene is around 0.2 eV and 0.9 eV, it can obtain about 5.7 THz and 7 THz wideband terahertz wave absorption (the absorption rate is more than 90%), respectively, and its maximum absorption rate is close to perfect absorption (about 99.8%). In addition, the structure is insensitive to 360° polarization and incident angle higher than 60°. In the above angle range, the absorptivity of the absorber can still be maintained to more than 90%. and the structure has potential applications in terahertz wave detection, spectral imaging and stealth technology. © 2022 Chinese Society of Astronautics. All rights reserved.

Keyword:

Polarization Electron resonance Absorption spectroscopy Electric fields Plate metal Chemical analysis Terahertz waves Chemical potential Silicon Fabry-Perot interferometers Graphene

Author Community:

  • [ 1 ] [Meng, Xianrui]Institute of Advanced Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Meng, Xianrui]Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Zhang, Ming]Institute of Advanced Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Zhang, Ming]Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Xi, Yupeng]Institute of Advanced Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Xi, Yupeng]Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Wang, Ruzhi]Institute of Advanced Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 8 ] [Wang, Ruzhi]Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 9 ] [Wang, Changhao]Institute of Advanced Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 10 ] [Wang, Changhao]Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 11 ] [Wang, Bo]Institute of Advanced Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 12 ] [Wang, Bo]Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China

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Source :

Infrared and Laser Engineering

ISSN: 1007-2276

Year: 2022

Issue: 6

Volume: 51

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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