The　behavior　of　H　in　β-Ga2O3　is　of　substantial　interest　because　it　is　a　common　residual　impurity　that　is　present　in　β-Ga2O3,　regardless　of　the　synthesis　methods.　Herein,　we　report　the　influences　of　H-plasma　exposure　on　the　electric　and　optical　properties　of　the　heteroepitaxial　β-Ga2O3　thin　films　grown　on　sapphire　substrates　by　chemical　vapor　deposition.　The　results　indicate　that　the　H　incorporation　leads　to　a　significantly　increased　electrical　conductivity,　a　greatly　reduced　defect-related　photoluminescence　emission,　and　a　slightly　enhanced　transmittance,　while　it　has　little　effect　on　the　crystalline　quality　of　the　β-Ga2O3　films.　The　significant　changes　in　the　electrical　and　optical　properties　of　β-Ga2O3　may　originate　from　the　formation　of　shallow　donor　states　and　the　passivation　of　the　defects　by　the　incorporated　H.　Temperature　dependent　electrical　properties　of　the　H-incorporated　β-Ga2O3　films　are　also　investigated,　and　the　dominant　scattering　mechanisms　at　various　temperatures　are　discussed.　©　2021　Chinese　Institute　of　Electronics.