Due　to　good　lattice　matching　and　bipolar　doping　behavior,　wide　bandgap　SrTiO3　(STO)　is　a　promising　substrate　for　the　heteroepitaxial　growth　of　beta-Ga2O3　to　construct　heterojunctions　for　(opto-)electronic　device　applications.　However,　the　investigation　of　the　growth　of　beta-Ga2O3　film　on　the　STO　(111)　substrate　is　still　lacking.　In　this　work,　for　the　first　time,　the　beta-Ga2O3　(2　01)　thin　films　were　epitaxially　grown　on　the　supercell　matched　STO　(111)　substrates　by　low　pressure　chemical　vapor　deposition.　The　effects　of　the　source　and　growth　temperatures　on　the　surface　roughness　and　crystalline　quality　of　the　beta-Ga2O3　films　were　systemically　investigated.　By　controlling　the　supply　of　Ga　source,　the　heteroepitaxial　beta-Ga2O3　film　grown　under　the　optimized　conditions　exhibits　a　narrow　X-ray　diffraction　rocking　curve　of　0.75　degrees　and　a　low　root-mean-square　roughness　of　1.10　nm.　Furthermore,　the　epitaxial　growth　of　beta-Ga2O3　films　on　the　STO　(10　0)　substrate　was　also　investigated.　The　heteroepitaxy　of　beta-Ga2O3　films　on　STO　lays　the　foundation　for　future　device　applications　of　beta-Ga2O3-based　heterojunctions.