With　the　rapid　development　of　graphene　technology,　today　graphene　performs　well　in　the　application　of　light-emitting　diode　(LED)　transparent　electrodes.　Naturally,　high-quality　contact　between　the　graphene　and　the　GaN　underneath　is　very　important.　This　paper　reports　a　process　for　nickel-assisted　transfer-free　technology　of　graphene　chemical　vapor　deposition　on　GaN.　The　nickel　film　plays　the　dual　role　of　etching　mask　and　growth　catalyst,　and　is　removed　by　the　subsequent　＂penetration　etching＂　process,　achieving　good　direct　contact　between　the　graphene　and　GaN.　The　results　show　that　the　graphene　effectively　improves　the　current　spreading　of　GaN-based　LEDs　and　enhances　their　electrical　performance.　This　scheme　avoids　the　wrinkles　and　cracks　of　graphene　from　the　transfer　process,　and　is　not　only　suitable　for　the　combination　of　graphene　and　GaN-based　LEDs,　but　also　provides　a　solution　for　the　integration　of　graphene　and　other　materials.