ZnO　is　third-generation　semiconductors　which　can　be　used　as　the　carrier　of　ultraviolet　photoluminescence　and　multiresonance　mode　laser.　In　recent　years,　ZnO　microcrystals　prepared　by　optical　vapor　supersaturation　precipitation　(OVSP)　have　shown　important　advantages　in　photocatalysis,　efficient　multi-color　light　source　and　efficient　electroluminescence.　However,　the　high　preparation　cost　and　low　production　efficiency　hinder　the　development　of　the　large-scale　device.　In　this　work,　we　designed　and　built　a　set　of　growth　devices　with　a　working　wavelength　of　1　080　nm　and　a　power　of　18%　(@2　500　W)　laser　heating.　The　height　of　the　raw　material　rod　was　6.　5　mm,　and　the　diameter　was　8　mm.　The　results　show　that　the　morphology,　structure,　and　luminescence　properties　of　the　products　prepared　by　this　device　are　very　close　to　those　prepared　by　the　OVSP　method,　and　the　production　efficiency　is　greatly　improved　(similar　to　500　%).　The　growth　device　successfully　prepared　acceptor-rich　ZnO　single　crystal　micro　rods　with　complete　hexagonal　cross-section　morphology.　The　diameter　and　length　of　ZnO　micro　rods　are　about　3.　8　and　10　similar　to　20　mu　m,　respectively.　Raman　spectra　show　that　the　Raman　peaks　of　ZnO　micro　rods　are　sharp,　and　the　Raman　mode　at　437　cm(-1)　indicates　that　the　ZnO　micro　rods　are　hexagonal　wurtzite　structures　with　good　crystallinity.　By　analysing　the　PL　spectra　of　ZnO　micro　rods,　it　was　found　that　the　ZnO　microtubes　prepared　by　the　OVSP　method　had　a　similar　ultraviolet　bimodal　structure,　indicating　that　there　exists　an　abundant　zinc-vacancies　acceptor.　In　the　80　similar　to　280　K　range,　with　the　increase　of　temperature,　the　fluorescence　intensity　of　ZnO　microrods　appears　＂thermal　quenching-negative　thermal　quenching-thermal　quenching＂　behavior.　The　negative　thermal　quenching　behavior　in　the　range　of　166　similar　to　200　K　is　related　to　the　intermediate　state　energy　level　(trap　center)　at　477　meV　below　the　conduction　band　bottom,　and　the　thermal　quenching　phenomenon　in　the　range　of　200　similar　to　280　K　is　related　to　the　non-radiative　recombination　center　at　600　meV　below　the　conduction　band　bottom.　The　appearance　of　both　is　related　to　the　prepared　ZnO　microrod　oxygen　vacancy　(V-o)　defect.　The　laser　growth　device　developed　in　this　paper　has　high　feasibility　and　practicability.　This　preparation　method　lays　a　technical　foundation　for　the　rapid　batch　growth　of　ZnO　single　crystal　micro　rods　with　rich　acceptors　and　is　also　of　great　significance　for　its　application　in　optoelectronic　devices.