This　paper　presents　the　experimental　characterization　of　SiC　MOSFETs　exposed　to　the　heavy-ion　irradiation.　Different　leakage　paths　related　to　the　drain　bias　used　during　the　tests　are　observed,　suggesting　different　damage　sites　in　the　devices,　which　can　be　further　verified　through　the　post-irradiation　measurements.　TCAD　simulations　are　utilized　to　explore　the　failure　mechanisms.　It　is　shown　that　the　gate　oxide　damage　firstly　occurs　in　the　middle　of　the　JFET　region,　while　gradually　spreads　to　the　channel　region　with　the　increase　of　biased　drain　voltage,　and　terminates　at　the　source　region　eventually.　The　findings　in　this　paper　demonstrate　that　more　attentions　should　be　paid　on　the　heavy-ion　induced　gate　oxide　damage　before　SiC　MOSFETs　could　act　as　a　drop-in　replacement　of　Si-based　counterparts　in　avionic　applications.