Chemical　vapor　deposition　(CVD)　has　emerged　as　a　promising　approach　for　the　controlled　growth　of　graphene　films　with　appealing　scalability,　controllability,　and　uniformity.　However,　the　synthesis　of　high-quality　graphene　films　still　suffers　from　low　production　capacity　and　high　energy　consumption　in　the　conventional　hot-wall　CVD　system.　In　contrast,　owing　to　the　different　heating　mode,　cold-wall　CVD　(CW-CVD)　system　exhibits　promising　potential　for　the　industrial-scale　production,　but　the　quality　of　as-received　graphene　remains　inferior　with　limited　domain　size　and　high　defect　density.　Herein,　we　demonstrated　an　efficient　method　for　the　batch　synthesis　of　high-quality　graphene　films　with　millimeter-sized　domains　based　on　CW-CVD　system.　With　reduced　defect　density　and　improved　properties,　the　as-received　graphene　was　proven　to　be　promising　candidate　material　for　electronics　and　anti-corrosion　application.　This　study　provides　a　new　insight　into　the　quality　improvement　of　graphene　derived　from　CW-CVD　system,　and　paves　a　new　avenue　for　the　industrial　production　of　high-quality　graphene　films　for　potential　commercial　applications.