Electrostatic　chuck　is　one　of　the　most　important　elements　in　the　semiconductor　field,　mainly　used　in　integrated　circuit　equipment　and　optical　equipment,　which　plays　the　role　of　carrying　wafers　and　substrates.　This　research　introduces　the　vacuum　chamber　and　uses　the　back　gas　method　to　test　the　chuck　force　of　the　Johnsen-Rahbek　type　electrostatic　chuck　with　different　thicknesses　of　the　oxide　layer　of　the　wafer　and　in　different　chuck　voltages.　In　this　article,　we　infer　that　the　chuck　force　comes　from　the　Coulomb　force　between　the　electrostatic　chuck　and　the　silicon　in　the　wafer　by　studying　the　electrical　properties　of　the　oxide　layer　and　the　structure　of　the　mesa.　We　built　the　mathematical　model　to　study　the　effect　of　the　thickness　of　the　oxide　layer　of　the　wafer　in　chuck　force　with　the　equivalent　capacitance　method.　The　experiment　and　simulation　results　show　that　because　of　the　low　contact　resistance,　under　the　same　chuck　voltage,　the　chuck　force　of　the　electrostatic　chuck　to　the　wafer　with　the　oxide　layer　is　greater　than　that　of　the　electrostatic　chuck　to　the　bare　silicon　wafer.　And　with　increasing　the　thickness　of　the　oxide　layer　of　the　wafer,　the　chuck　force　between　the　electrostatic　chuck　and　wafer　increases　first　and　then　decreases.　This　research　has　important　guidance　for　the　improvement　of　the　Johnsen-Rahbek　effect　theory　and　the　optimization　of　the　structure　of　the　electrostatic　chuck,　and　provides　a　theoretical　basis　for　the　development　of　semiconductor　equipment.　©　2023　Science　Press.　All　rights　reserved.