The　electrostatic　chuck　is　a　key　device　in　the　semiconductor　field,　and　it　mainly　plays　the　role　of　supporting　and　fixing　the　wafer.　This　study　uses　Maxwell　software　to　simulate　the　voltage　distribution　around　the　electrode　when　the　electrostatic　chuck　is　working.　It　is　concluded　that　the　edge　effect　of　the　electrode　is　less　than　4%,　and　the　influence　of　the　edge　effect　of　the　electrode　on　the　adsorption　force　can　be　ignored.　In　addition,　based　on　the　equivalent　capacitance　method,　a　simulation　model　for　calculating　the　adsorption　force　of　the　Coulomb-type　electrostatic　chuck　is　established.　A　vacuum　chamber　was　built　for　research,　and　the　chucking　force　of　two　electrostatic　chucks　with　different　electrode　structures　and　the　chucking　force　of　electrostatic　chucks　to　wafers　of　different　materials　were　tested　according　to　the　back　blowing　gas　method.　The　experiment　and　simulation　result　shows　that　the　chucking　force　of　the　Coulomb-type　electrostatic　chuck　is　proportional　to　the　electrode　area,　and　the　electrode　structure　hardly　affects　the　chucking　force　of　the　electrostatic　chuck.　Under　the　same　chucking　voltage,　for　wafers　whose　backside　oxide　layer　thickness　is　within　500　nm,　the　influence　of　the　wafer　oxide　layer　on　the　chucking　force　of　the　Coulomb-type　electrostatic　chuck　is　less　than　2%,　which　can　be　ignored.　The　research　in　this　paper　has　important　guiding　significance　for　the　design　and　optimization　of　the　electrostatic　chuck.　©　2023　Science　Press.　All　rights　reserved.