Electrostatic　chuck　is　one　of　the　most　important　elements　in　the　semiconductor　field,　mainly　used　in　integrated　circuit　equipment　and　optical　equipment,　playing　the　role　of　carrying　wafers　and　substrates.　In　this　article,　we　use　the　physical　vapor　deposition　method　to　make　the　mesa　of　Johnsen-Rahbek　type　electrostatic　chuck.　In　this　research,　we　built　a　vacuum　chamber　and　used　the　back　gas　method　to　test　the　chuck　force　of　the　Johnsen-Rahbek　type　electrostatic　chuck　with　different　mesa　heights　and　different　chuck　voltages.　We　built　the　mathematical　model　to　study　the　effect　of　electrical　properties　and　mechanical　dimensions　in　chuck　force　with　the　equivalent　capacitance　method.　The　experiment　and　simulation　results　show　that　because　of　the　low　contact　resistance,　there　is　nearly　no　chuck　force　between　the　mesa　and　silicon　wafers.　And　with　the　increasing　height　of　the　mesa　and　increasing　the　proportion　of　the　area　of　the　mesa,　the　chuck　force　between　the　mesa　and　silicon　wafer　decreases.　In　addition,　we　found　that　the　surface　topography　has　nearly　no　effect　on　the　chuck　force　between　the　mesa　and　silicon　wafer.　This　research　has　important　guidance　for　the　improvement　of　Johnsen-Rahbek　effect　theory　and　the　structure　designing　of　the　electrostatic　chuck,　and　provides　a　theoretical　basis　for　the　development　of　semiconductor　equipment.　©　2023　Science　Press.　All　rights　reserved.