Charge　coupled　drift　region　are　commonly　used　to　obtain　smaller　specific　on-resistance　for　majority　carrier　device.　However,　as　the　field　distribution　of　edge　terminations　is　concerned,　charge　coupled　structure　is　well　suited　for　power　devices　with　low　blocking　voltage　in　the　range　of　30-200V.　In　this　paper,　three　kinds　of　multi-trench　termination　are　designed　and　simulated　for　1200V　SiC　devices　with　charge　coupled　drift　region.　The　results　show　that　＇the　termination　of　deep　trench　coupled　field　plate　(FP)　with　field　limiting　ring　(FLR)＇　and　＇the　termination　of　deep　trench　coupled　field　plate　(FP)　with　field　limiting　ring　(FLR)　and　floating　island＇　can　both　meet　the　requirement　of　blocking　voltage　greater　than　1200V,　and　the　maximum　efficiency　of　the　termination　can　reach　87.8　%.　©　2022　Association　for　Computing　Machinery.