A　new　method　for　cutting　silicon　carbide　wafers　using　a　femtosecond　laser　has　been　proposed　after　studying　the　mechanism　of　action.　The　superiority　of　this　method　was　established　through　a　comparison　with　traditional　molecular　laser　cutting　on　a　test　bench.　The　cutting　speed　and　laser　peak　power　were　adjusted　to　determine　the　best　parameters　for　cutting　silicon　carbide　wafers　using　femtosecond　pulse　laser.　Using　this　method　can　effectively　reduce　production　costs,　improve　crystal　cutting　efficiency　and　quality,　and　has　potential　applications　in　hard　and　brittle　crystal　cutting.　©　2023　IEEE.