With　the　developing　of　insulated　gate　bipolar　transistor　(IGBT),　a　method　to　accurately　solve　the　detailed　problems　caused　by　thermal　behaviors　in　different　locations　and　layers　of　automotive　IGBT　modules　is　necessary.　The　paper　proposes　an　RC　thermal　network　for　automotive　IGBT　modules.　The　thermal　effects　are　modeled　among　chips　and　key　layers.　And　particularly　boundary　conditions　are　considered,　including　the　heat　dissipation　conditions.　It　is　demonstrated　that　the　model　makes　it　possible　to　estimate　temperature　quickly　and　accurately　of　automotive　IGBT　modules　in　the　real　normal　running　conditions.　Compared　with　the　results　of　finite-element-based　simulation　and　infrared　temperature　measurement,　the　proposed　thermal　model　is　verified.　©　2021　IEEE.